Andanta GmbH

Optoelektronische Bildsensoren für wissenschaftliche Anwendunge

lnGaAs PIN Photodiodes

Developed for large-area NIR power measurement, gas detection, spectral analysis, humidity measurement and more.

Our sensors cover different spectral ranges: 0.9 – 1.7 μm, 0.6 – 1.7 μm, 1.2 – 2.2 μm (on request). With active diameters from Ø 500 μm to Ø 5000 μm, we offer flexible active areas. Available with different housings T0, T1, T2, CLCC (on request), or as a bare chip.

InGaAs PIN Photodiode general datasheet (1.7 μm)
InGaAs PIN Photodiode (1.7 μm) in TO-Package
InGaAs PIN Photodiode (1.7 μm) Chip
InGaAs Quadrant PIN Photodiode (1.7 μm) Chip
InGaAs PIN Photodiode T1 (1.7 μm) in TO with cooler
VIS-InGaAs PIN Photodiode (0.6 – 1.7 μm)
InGaAs PIN Photodiode (0.9 – 2.2 μm)
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