ANDANTA GMBH
InGaAs matrix sensors cooled
Two-dimensional Near-Infrared (NIR) Focal Plane Arrays (FPA) embedded in a Kovar package with a one- or two-stage thermoelectric cooler
Optoelektronische Bildsensoren für wissenschaftliche Anwendunge
ANDANTA GMBH
InGaAs matrix sensors uncooled
Two-dimensional Near-Infrared (NIR) Focal Plane Arrays (FPA) integrated in a ceramic housing without a cooler
ANDANTA GMBH
InGaAs linear sensors cooled
One-dimensional Near-Infrared (NIR) Linear Detector Array (LDA) installed in a Kovar housing, available with a one-stage thermoelectric cooler
ANDANTA GMBH
InGaAs linear sensors uncooled
One-dimensional Near-Infrared (NIR) Linear Detector Array (LDA) installed in a ceramic housing without a cooler
ANDANTA GMBH
Si-CCD sensors highest resolution
High-resolution silicon image sensors for the ultraviolet to near infrared spectral range (customized)
ANDANTA GMBH
X-ray Si-CCD
Customized Charged Coupled Devices for the direct detection of X-rays
ANDANTA GMBH
Curved Si-CCD
Silicon Time Delay Integration image sensors as customized special developments
ANDANTA GMBH
Custom Si-TDI image sensors
Silicon Time Delay Integration image sensors as customized special developments
Optoelectronic image sensors for scientific applications
We have more than 40 years experience in development, manufacturing and sales of opto-electronic detectors and emitters.
Please contact us – we will be glad to consult you in the selection of applicative detector solutions or develop, together with our partners, individual custom products.
Our Products
Sensors for NIR (near-infrared) imaging. Spectral range 0.9 (0.6) μm to 1.7 (2.2) μm and pixel resolution (pixel size) 64 x 64 (40 μm) to 1280 x 1024 (15 μm).
For use in NIR (near-infrared) spectroscopy, interferometry (rectangular pixels) and for web inspection (square pixels), 512 x 1 (25 μm pixels) to 2048 x 1 (12.5 μm pixels).
For establishing a conductive connection (hybridization) between a photodiode array and a silicon CMOS readout integrated circuit (ROIC) to complete a NIR (near-infrared) image sensor assembly.
ANDANTA GmbH was founded in January 2009 and specializes in the development and supply of high-quality optoelectronic image sensors and detector arrays. Our focus is on supporting developers and manufacturers of cameras, spectrometers, telescopes and other scientific optoelectronic systems with customized imaging solutions for special applications in niche markets.
Our components are increasingly customer-specific developments that are created in close cooperation with our manufacturing partners. In addition to these individual solutions, we also offer a selection of standard products as a starting point for further detector optimizations for the customer application.
Our components are increasingly customer-specific developments that are created in close cooperation with our manufacturing partners. In addition to these individual solutions, we also offer a selection of standard products as a starting point for further detector optimizations for the customer application.
1280 x 1024 InGaAs matrix sensors ♦ 2048 x 1 InGaAs linear sensors ♦ Price reduction 640 x 512 InGaAs matrix sensors (Badger)
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InGaAs-Matrix Sensor with 1280×1024 Pixel Resolution and 15 μm Pixel Size
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InGaAs-Linear Sensor with 2048 Pixels and 12.5 μm Pixel Size
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Linear InGaAs sensors ♦ IR-extended 1.9 µm InGaAs-FPAs ♦ Flip-Chip bond servicesPDF ➦
VIS-InGaAs matrix sensors (FPAs) ♦ 64 x 64 InGaAs matrix sensors (FPAs) ♦ 4k-Si-TDI-CCD ♦ InGaAs Avalanche (APD) + PIN + Quadrant Photodiodes
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